Chemical conversion of MoS2 thin films deposited by atomic layer deposition (ALD) into molybdenum nitride monitored by <i>in situ</i> reflectance measurements
نویسندگان
چکیده
Two-dimensional (2D) metal nitrides are new emerging materials with potential applications in electronics, energy storage, or conversion efficiency. In this paper, we report the synthesis of molybdenum nitride by nitriding disulfide (MoS2) via a 700 °C ammonia (NH3) reactive heat treatment. A well-controlled uniform MoS2 thin film was prepared atomic layer deposition (ALD). The progressive reaction has been demonstrated and monitored situ reflectance measurements. These results have confirmed Raman x-ray photoelectron spectrometry. This method paves way to route Mo obtained from 2D-MoS2 deposited ALD.
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ژورنال
عنوان ژورنال: Journal of vacuum science & technology
سال: 2023
ISSN: ['2327-9877', '0734-211X']
DOI: https://doi.org/10.1116/6.0002678